ATP30

ATP301-TL-H vs ATP301 vs ATP302

 
PartNumberATP301-TL-HATP301ATP302
DescriptionMOSFET POWER MOSFET
ManufacturerON SemiconductorONON
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseATPAK-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current28 A--
Rds On Drain Source Resistance75 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge73 nC--
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation70 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingReelReelReel
SeriesATP301ATP301ATP302
Transistor Type1 P-Channel1 P-Channel1 P-Channel
BrandON Semiconductor--
Fall Time190 ns--
Product TypeMOSFET--
Rise Time130 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time330 ns--
Typical Turn On Delay Time32 ns--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case-TO-252-3TO-252-3
Pd Power Dissipation-70 W70 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-28 A70 A
Vds Drain Source Breakdown Voltage-- 100 V- 60 V
Rds On Drain Source Resistance-57 mOhms13 mOhms
Minimum Operating Temperature--- 55 C
制造商 型号 描述 RFQ
ATP304-TL-H MOSFET PCH 4.5V DRIVE SERIES
ATP302-TL-H MOSFET POWER MOSFET
ATP301-TL-H MOSFET POWER MOSFET
ATP301 全新原装
ATP302 全新原装
ATP302-TL 全新原装
ATP302-TL-H-T1 全新原装
ATP302D 全新原装
ATP303-TL-H 全新原装
ATP303S 全新原装
ATP304 全新原装
ATP304D 全新原装
ATP304S 全新原装
ATP3057 全新原装
ATP3057B 全新原装
ATP3057BB 全新原装
ATP3057BN 全新原装
ATP305S 全新原装
ATP306D 全新原装
ATP306S 全新原装
ATP30D60B 全新原装
ATP30D60BG 全新原装
ATP30S20BCTG 全新原装
ON Semiconductor
ON Semiconductor
ATP304-TL-H RF Bipolar Transistors MOSFET PCH 4.5V DRIVE SERIES
ATP302-TL-H RF Bipolar Transistors MOSFET POWER MOSFET
ATP301-TL-H RF Bipolar Transistors MOSFET POWER MOSFET
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