AUIRF1324ST

AUIRF1324STRL7P vs AUIRF1324STRL vs AUIRF1324STRR

 
PartNumberAUIRF1324STRL7PAUIRF1324STRLAUIRF1324STRR
DescriptionMOSFET MOSFET_(20V,40V)_47MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhmsRF Bipolar Transistors MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms
ManufacturerInfineonInfineonInternational Rectifier
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-252-3-
QualificationAEC-Q101AEC-Q101-
PackagingReelReelReel
Height4.4 mm2.3 mm-
Length10 mm6.5 mm-
Width9.25 mm6.22 mm-
BrandInfineon TechnologiesInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001515572SP001518546-
Unit Weight0.077603 oz0.139332 oz0.139332 oz
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Vds Drain Source Breakdown Voltage-24 V-
Id Continuous Drain Current-44 A-
Rds On Drain Source Resistance-1.65 mOhms-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 175 C+ 175 C
Pd Power Dissipation-300 W-
Configuration-SingleSingle
Channel Mode-EnhancementEnhancement
Transistor Type-1 N-Channel1 N-Channel
Fall Time-120 ns120 ns
Rise Time-190 ns190 ns
Typical Turn Off Delay Time-83 ns83 ns
Typical Turn On Delay Time-17 ns17 ns
Package Case--TO-252-3
Pd Power Dissipation--300 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--44 A
Vds Drain Source Breakdown Voltage--24 V
Rds On Drain Source Resistance--1.5 mOhms
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
AUIRF1324STRL7P MOSFET MOSFET_(20V,40V)_47
AUIRF1324STRL RF Bipolar Transistors MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms
AUIRF1324STRR RF Bipolar Transistors MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms
AUIRF1324STRL7P MOSFET NCH 24V 340A D2PAK
Infineon / IR
Infineon / IR
AUIRF1324STRL MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms
AUIRF1324STRLPBF 全新原装
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