 |  | |
| PartNumber | AUIRF7669L2TR | AUIRF7665S2TR |
| Description | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | MOSFET 100V AUTO GRADE 1 N-CH HEXFET |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DirectFET-L8 | DirectFET-SB |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 114 A | 14.4 A |
| Rds On Drain Source Resistance | 3.5 mOhms | 62 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 81 nC | 8.3 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 100 W | 30 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Height | 0.74 mm | 0.74 mm |
| Length | 9.15 mm | 4.85 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 7.1 mm | 3.95 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 14 ns | 3.6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 30 ns | 6.4 ns |
| Factory Pack Quantity | 4000 | 4800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns | 7.1 ns |
| Typical Turn On Delay Time | 15 ns | 3.8 ns |
| Part # Aliases | SP001519182 | SP001519440 |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Forward Transconductance Min | - | 8.8 S |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
AUIRF7669L2TR | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | |
| AUIRF7665S2TR | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | ||
| AUIRF7669L2TR | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | ||
| AUIRF7665S2TR | MOSFET N-CH 100V 77A DIRECTFET2 | ||
| AUIRF7669L2TR1 | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | ||
| AUIRF7669L2TR-CUT TAPE | 全新原装 |