AUIRFR024NT

AUIRFR024NTRL vs AUIRFR024NTR vs AUIRFR024NTRPBF

 
PartNumberAUIRFR024NTRLAUIRFR024NTRAUIRFR024NTRPBF
DescriptionMOSFET AUTO 55V 1 N-CH HEXFET 75mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 75mOhms
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance75 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge20 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation45 W--
ConfigurationSingleSingle Quint Source-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min4.5 S--
Fall Time27 ns27 ns-
Product TypeMOSFET--
Rise Time34 ns34 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time4.9 ns4.9 ns-
Part # AliasesSP001522686--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-45 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-17 A-
Vds Drain Source Breakdown Voltage-55 V-
Vgs th Gate Source Threshold Voltage-4 V-
Rds On Drain Source Resistance-75 mOhms-
Qg Gate Charge-20 nC-
Forward Transconductance Min-4.5 S-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
AUIRFR024NTRL MOSFET AUTO 55V 1 N-CH HEXFET 75mOhms
AUIRFR024NTRL MOSFET N-CH 55V 17A DPAK
AUIRFR024NTRR RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 75mOhms
AUIRFR024NTR MOSFET AUTO 55V 1 N-CH HEXFET 75mOhms
AUIRFR024NTRPBF 全新原装
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