 |  | |
| PartNumber | AUIRL7736M2TR | AUIRL7732S2TR |
| Description | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DirectFET-M4 | DirectFET-SC |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V |
| Id Continuous Drain Current | 112 A | 58 A |
| Rds On Drain Source Resistance | 4.3 mOhms | 10.5 mOhms |
| Vgs Gate Source Voltage | 16 V | 16 V |
| Qg Gate Charge | 52 nC | 22 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Pd Power Dissipation | 63 W | 41 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Height | 0.74 mm | 0.74 mm |
| Length | 6.35 mm | 4.85 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.95 mm | 3.95 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 76 ns | 37 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 210 ns | 123 ns |
| Factory Pack Quantity | 4800 | 4800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 56 ns | 22 ns |
| Typical Turn On Delay Time | 48 ns | 21 ns |
| Part # Aliases | SP001521898 | SP001521366 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
AUIRL7736M2TR | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | |
| AUIRL7732S2TR | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms | ||
| AUIRL7736M2TR | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | ||
| AUIRL7732S2TR | RF Bipolar Transistors MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms | ||
| AUIRL7736M2TR1 | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | ||
| AUIRL7732S2TR1 | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms |