 | |  | |
| PartNumber | AUIRLR014NTRL | AUIRLR014N | AUIRLR014NTR |
| Description | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 10 A | 10 A | - |
| Rds On Drain Source Resistance | 140 mOhms | 210 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 16 V | 16 V | - |
| Qg Gate Charge | 7.9 nC | 5.3 nC | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 28 W | 28 W | - |
| Configuration | Single | Single | Single Quint Source |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Tube | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Forward Transconductance Min | 3.1 S | - | - |
| Fall Time | 23 ns | - | 23 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 47 ns | - | 47 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001516046 | SP001518258 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 28 W |
| Vgs Gate Source Voltage | - | - | +/- 16 V |
| Id Continuous Drain Current | - | - | 10 A |
| Vds Drain Source Breakdown Voltage | - | - | 55 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1 V |
| Rds On Drain Source Resistance | - | - | 140 mOhms |
| Qg Gate Charge | - | - | 7.9 nC |
| Forward Transconductance Min | - | - | 3.1 S |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRLR014NTRL | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | |
| AUIRLR014N | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | ||
| AUIRLR014NTRR | RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | ||
| AUIRLR014NTR | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | ||
| AUIRLR014NTRPBF | 全新原装 | ||
Infineon Technologies |
AUIRLR014N | RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | |
| AUIRLR014NTRL | RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms |