 |  | |
| PartNumber | BAL99E6433HTMA1 | BAL99E6327HTSA1 |
| Description | Diodes - General Purpose, Power, Switching Silicon Tuning Diode | Diodes - General Purpose, Power, Switching Silicon Tuning Diode |
| Manufacturer | Infineon | Infineon |
| Product Category | Diodes - General Purpose, Power, Switching | Diodes - General Purpose, Power, Switching |
| RoHS | Y | Y |
| Product | Switching Diodes | Switching Diodes |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Peak Reverse Voltage | 85 V | 85 V |
| Max Surge Current | 4.5 A | 4.5 A |
| If Forward Current | 250 mA | 250 mA |
| Configuration | Single | Single |
| Recovery Time | 4 ns | 4 ns |
| Vf Forward Voltage | 1250 mV | 1250 mV |
| Ir Reverse Current | 50 uA | 50 uA |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | BAL99 | BAL99 |
| Packaging | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies |
| Pd Power Dissipation | 370 mW | 370 mW |
| Product Type | Diodes - General Purpose, Power, Switching | Diodes - General Purpose, Power, Switching |
| Factory Pack Quantity | 10000 | 3000 |
| Subcategory | Diodes & Rectifiers | Diodes & Rectifiers |
| Part # Aliases | 99 BAL BAL99E6433XT E6433 SP000010161 | 99 BAL BAL99E6327XT E6327 SP000010159 |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BAL99E6433HTMA1 | Diodes - General Purpose, Power, Switching Silicon Tuning Diode | |
| BAL99E6327HTSA1 | Diodes - General Purpose, Power, Switching Silicon Tuning Diode | ||
| BAL99E6327HTSA1 | DIODE GEN PURP 80V 250MA SOT23-3 | ||
| BAL99E6433HTMA1 | DIODE GEN PURP 80V 250MA SOT23-3 | ||
| BAL99E6327 | Rectifier Diode, 1 Element, Silicon | ||
| BAL99E6433 | 全新原装 | ||
| BAL99E6433HTMA1(E6327) | 全新原装 |