BC847CDW

BC847CDW1T1G vs BC847CDW1T1 vs BC847CDW1T1/1GX

 
PartNumberBC847CDW1T1GBC847CDW1T1BC847CDW1T1/1GX
DescriptionBipolar Transistors - BJT 100mA45V Dual NPNTRANS GP BJT NPN 45V 0.1A 6PIN SC-88 - Bulk (Alt: BC847CDW1T1)
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTIC Chips-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-70-6--
Transistor PolarityNPNNPN-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.6 V0.6 V-
Maximum DC Collector Current0.1 A0.1 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBC846CBC846C-
Height0.9 mm--
Length2 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.25 mm--
BrandON Semiconductor--
Continuous Collector Current0.1 A0.1 A-
DC Collector/Base Gain hfe Min420--
Pd Power Dissipation380 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000988 oz0.000988 oz-
Package Case-6-TSSOP, SC-88, SOT-363-
Mounting Type-Surface Mount-
Supplier Device Package-SC-88/SC70-6/SOT-363-
Power Max-380mW-
Transistor Type-2 NPN (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-45V-
DC Current Gain hFE Min Ic Vce-420 @ 2mA, 5V-
Vce Saturation Max Ib Ic-600mV @ 5mA, 100mA-
Current Collector Cutoff Max-15nA (ICBO)-
Frequency Transition-100MHz-
Pd Power Dissipation-380 mW-
Collector Emitter Voltage VCEO Max-45 V-
Collector Base Voltage VCBO-50 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-420-
制造商 型号 描述 RFQ
BC847CDW1T1G Bipolar Transistors - BJT 100mA45V Dual NPN
BC847CDW1T1 TRANS GP BJT NPN 45V 0.1A 6PIN SC-88 - Bulk (Alt: BC847CDW1T1)
BC847CDW1T1/1GX 全新原装
ON Semiconductor
ON Semiconductor
BC847CDW1T1G Bipolar Transistors - BJT 100mA 50V Dual NPN
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