BC848BWH

BC848BWH6327XTSA1 vs BC848BWH6327

 
PartNumberBC848BWH6327XTSA1BC848BWH6327
DescriptionBipolar Transistors - BJT AF TRANSISTORTransistor: NPN, bipolar, 30V, 100mA, 330mW, SOT323
ManufacturerInfineonInfineon Technologies
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF
RoHSY-
Mounting StyleSMD/SMT-
Package / CaseSOT-323-6-
Transistor PolarityNPN-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max30 V-
Collector Base Voltage VCBO30 V-
Emitter Base Voltage VEBO6 V-
Collector Emitter Saturation Voltage90 mV-
Maximum DC Collector Current200 mA-
Gain Bandwidth Product fT250 MHz-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 150 C-
SeriesBC848BC848
DC Current Gain hFE Max450-
PackagingReelReel
BrandInfineon Technologies-
Continuous Collector Current100 mA-
DC Collector/Base Gain hfe Min200-
Pd Power Dissipation330 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity3000-
SubcategoryTransistors-
Part # Aliases848BW BC BC848BWH6327XT H6327 SP000747410-
Part Aliases-848BW BC BC848BWH6327XT H6327 SP000747410
Package Case-SOT-323-3
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BC848BWH6327XTSA1 Bipolar Transistors - BJT AF TRANSISTOR
BC848BWH6327XTSA1 TRANS NPN 30V 0.1A SOT323
BC848BWH6327 Transistor: NPN, bipolar, 30V, 100mA, 330mW, SOT323
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