 |  | | |
| PartNumber | BCM856DS,115 | BCM856DS/DG | BCM856DS/DG , SCI7700YNA |
| Description | Bipolar Transistors - BJT COMPLEX DISCRETE S2023D/SOT45 | ||
| Manufacturer | Nexperia | NXP | - |
| Product Category | Bipolar Transistors - BJT | IC Chips | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-74-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | - 65 V | - | - |
| Collector Base Voltage VCBO | - 80 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 200 mV | - | - |
| Maximum DC Collector Current | - 200 mA | - | - |
| Gain Bandwidth Product fT | 175 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 450 | - | - |
| Height | 1 mm (Max) | - | - |
| Length | 3.1 mm (Max) | - | - |
| Packaging | Reel | - | - |
| Width | 1.7 mm (Max) | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 380 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000381 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
BCM856DS,115 | Bipolar Transistors - BJT COMPLEX DISCRETE S2023D/SOT45 | |
| BCM856DS,115 | Bipolar Transistors - BJT COMPLEX DISCRETE S2023D/SOT45 | ||
NXP Semiconductors |
BCM856DS/DG | 全新原装 | |
| BCM856DS/DG , SCI7700YNA | 全新原装 | ||
| BCM856DSDG | 全新原装 |