 |  | | |
| PartNumber | BCP5616TA | BCP5616T1 | BCP5616T1G |
| Description | Bipolar Transistors - BJT NPN Medium Power | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin | Transistor: NPN, bipolar, 100V, 1A, 1.5W, SOT223 |
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.5 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 125 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCP56 | - | - |
| DC Current Gain hFE Max | 250 at 150 mA, 2 V | - | - |
| Packaging | Reel | - | - |
| Brand | Diodes Incorporated | - | - |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 25 at 5 mA, 2 V | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
BCP5616TC | Bipolar Transistors - BJT NPN Medium Power | |
| BCP5616TA | Bipolar Transistors - BJT NPN Medium Power | ||
ON Semiconductor |
BCP5616T1 | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin | |
| BCP5616T1G | Transistor: NPN, bipolar, 100V, 1A, 1.5W, SOT223 | ||
| BCP5616TC | Trans GP BJT NPN 80V 1A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R | ||
| BCP5616TA | Bipolar Transistors - BJT NPN Medium Powe |