BCW66H stock, BCW66H, BCW66HQTA


PartNumber	BCW66HQTA	BCW66HR	BCW66HTA
Description	Bipolar Transistors - BJT General Purpose Transistor	Bipolar Transistors - BJT BCW66H/SOT23/TO-236A	Bipolar Transistors - BJT NPN Low Saturation
Manufacturer	Diodes Incorporated	Nexperia	Diodes Incorporated
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y	Y
Technology	Si	-	-
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-23-3	SOT-23-3	SOT-23-3
Transistor Polarity	NPN	NPN	NPN
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	45 V	45 V	45 V
Collector Base Voltage VCBO	75 V	50 V	75 V
Emitter Base Voltage VEBO	7 V	5 V	5 V
Collector Emitter Saturation Voltage	0.7 mV	450 mV	700 mV
Maximum DC Collector Current	800 mA	800 mA	1 A
Gain Bandwidth Product fT	100 MHz	100 MHz	100 MHz
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
DC Current Gain hFE Max	630	630	-
Packaging	Reel	-	Reel
Brand	Diodes Incorporated	Nexperia	Diodes Incorporated
Continuous Collector Current	800 mA	800 mA	0.8 A
DC Collector/Base Gain hfe Min	250	250	-
Pd Power Dissipation	350 mW	250 mW	330 mW
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	3000	3000	3000
Subcategory	Transistors	Transistors	Transistors
Qualification	-	AEC-Q101	-
Series	-	-	BCW66
Height	-	-	1.1 mm
Length	-	-	3 mm
Width	-	-	1.4 mm
Unit Weight	-	-	0.000282 oz

Search Part Number : "BCW66H", Match & Start with "BCW66H" - Total : 13

制造商	型号	描述
Diodes Incorporated	BCW66HQTA	Bipolar Transistors - BJT General Purpose Transistor
Diodes Incorporated	BCW66HTA	Bipolar Transistors - BJT NPN Low Saturation
Nexperia	BCW66HR	Bipolar Transistors - BJT BCW66H/SOT23/TO-236A
	BCW66HVL	Bipolar Transistors - BJT 45 V, 800 mA NPN general-purpose transistor
	BCW66HR	BCW66HSOT23TO-236AB
	BCW66HVL	BCW66HSOT23TO-236AB
Infineon Technologies	BCW66H	TRANSISTOR, NPN, 0.8A, 45V, SOT23, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:45V, Transition Frequency ft:170MHz, Power Dissipation Pd:330mW, DC Collector Current:800mA, DC Cur
Infineon Technologies	BCW66HE6327	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
	BCW66H E6327	全新原装
	BCW66H-7	全新原装
	BCW66HTA-79	全新原装
	BCW66H-TP	全新原装
	BCW66HTA	Bipolar Transistors - BJT NPN Low Saturation

BCW66H