BD435 stock, BD435, BD435G


PartNumber	BD435G	BD435S	BD435F
Description	Bipolar Transistors - BJT BIP NPN 4A 22V	Bipolar Transistors - BJT NPN Epitaxial Sil
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-225-3	TO-126-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	32 V	32 V	-
Collector Base Voltage VCBO	32 V	32 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	500 mV	0.2 V	-
Maximum DC Collector Current	4 A	4 A	-
Gain Bandwidth Product fT	3 MHz	3 MHz	-
Minimum Operating Temperature	- 55 C	- 65 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	BD435	BD435	-
Height	11.04 mm	11 mm	-
Length	7.74 mm	8 mm	-
Packaging	Bulk	Bulk	-
Width	2.66 mm	3.25 mm	-
Brand	ON Semiconductor	ON Semiconductor / Fairchild	-
DC Collector/Base Gain hfe Min	40	40	-
Pd Power Dissipation	36000 mW	36 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	500	2000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.068784 oz	0.026843 oz	-
Continuous Collector Current	-	4 A	-
Part # Aliases	-	BD435S_NL	-

Search Part Number : "BD435", Match & Start with "BD435" - Total : 17

制造商	型号	描述
	BD435G	Bipolar Transistors - BJT BIP NPN 4A 22V
	BD435F	全新原装
ON Semiconductor / Fairchild	BD435STU	Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor / Fairchild	BD435S	Bipolar Transistors - BJT NPN Epitaxial Sil
STMicroelectronics	BD435	Bipolar Transistors - BJT NPN Medium Power
ON Semiconductor	BD435	TRANS NPN 32V 4A TO-225AA
	BD435 041	全新原装
	BD435 100-250 TO-126	全新原装
	BD435 85-375	全新原装
	BD435,BD435N	全新原装
	BD435-16	全新原装
	BD435/BD436	全新原装
	BD435A	全新原装
	BD435N	全新原装
	BD435STU	TRANS NPN 32V 4A TO-126
	BD435G	Bipolar Transistors - BJT BIP NPN 4A 22V
	BD435S	TRANS NPN 32V 4A TO-126

BD435