BFR840L3RHESDE

BFR840L3RHESDE6327XTSA1 vs BFR840L3RHESDE6327 vs BFR840L3RHESDE6327XTSA1-CUT TAPE

 
PartNumberBFR840L3RHESDE6327XTSA1BFR840L3RHESDE6327BFR840L3RHESDE6327XTSA1-CUT TAPE
DescriptionRF Bipolar Transistors RF BIP TRANSISTORS
ManufacturerInfineonINFINEON-
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF-
RoHSY--
SeriesBFR840L3BFR840L3-
Transistor TypeBipolarNPN-
TechnologySiGeSiGe-
Collector Emitter Voltage VCEO Max2.25 V--
Emitter Base Voltage VEBO2.9 V--
Continuous Collector Current35 mA35 mA-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
ConfigurationSingleSingle-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSLP-3--
PackagingReelDigi-ReelR Alternate Packaging-
Operating Frequency75 GHz75 GHz-
TypeRF Silicon Germanium--
BrandInfineon Technologies--
Pd Power Dissipation75 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity15000--
SubcategoryTransistors--
Part # Aliases840L3RHESD BFR BFR84L3RHESDE6327XT E6327 SP000978848--
Part Aliases-840L3RHESD BFR BFR840L3RHESDE6327XT E6327 SP000978848-
Package Case-SC-101, SOT-883-
Mounting Type-Surface Mount-
Supplier Device Package-TSLP-3-9-
Power Max-75mW-
Current Collector Ic Max-35mA-
Voltage Collector Emitter Breakdown Max-2.6V-
DC Current Gain hFE Min Ic Vce-150 @ 10mA, 1.8V-
Frequency Transition-75GHz-
Noise Figure dB Typ f-0.5dB @ 450MHz-
Gain-27dB-
Pd Power Dissipation-75 mW-
Collector Emitter Voltage VCEO Max-2.25 V-
Emitter Base Voltage VEBO-2.9 V-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BFR840L3RHESDE6327XTSA1 RF Bipolar Transistors RF BIP TRANSISTORS
BFR840L3RHESDE6327 全新原装
BFR840L3RHESDE6327XTSA1 RF Bipolar Transistors RF BIP TRANSISTORS
BFR840L3RHESDE6327XTSA1-CUT TAPE 全新原装
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