 |  | | |
| PartNumber | BGA7H1N6E6327XTSA1 | BGA7H1N6E6327 | BGA7H1N6E6327XTSA1INFINE |
| Description | RF Amplifier RF SILICON MMIC | Silicon Germanium Low Noise Amp for LTE | |
| Manufacturer | Infineon | - | - |
| Product Category | RF Amplifier | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSNP-6 | - | - |
| Type | LNA for LTE | - | - |
| Technology | SiGe | - | - |
| Operating Frequency | 2300 MHz to 2690 MHz | - | - |
| P1dB Compression Point | - 1 dBm | - | - |
| Gain | 12.5 dB | - | - |
| Operating Supply Voltage | 3.3 V | - | - |
| NF Noise Figure | 0.6 dB | - | - |
| OIP3 Third Order Intercept | 6 dBm | - | - |
| Operating Supply Current | 4.7 mA | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Packaging | Reel | - | - |
| Brand | Infineon Technologies | - | - |
| Input Return Loss | 11 dB | - | - |
| Isolation dB | 21 dB | - | - |
| Pd Power Dissipation | 60 mW | - | - |
| Product Type | RF Amplifier | - | - |
| Factory Pack Quantity | 15000 | - | - |
| Subcategory | Wireless & RF Integrated Circuits | - | - |
| Part # Aliases | 7H1N6 BGA E6327 SP001109130 | - | - |
| Unit Weight | 0.000032 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BGA7H1N6E6327XTSA1 | RF Amplifier RF SILICON MMIC | |
| BGA7H1N6E6327 | Silicon Germanium Low Noise Amp for LTE | ||
| BGA7H1N6E6327XTSA1INFINE | 全新原装 | ||
| BGA7H1N6E6327XTSA1 | RF Amplifier RF SILICON MMIC |