BSB014

BSB014N04LX3 G vs BSB014N04LX3G vs BSB014N04LX3GCT-ND

 
PartNumberBSB014N04LX3 GBSB014N04LX3GBSB014N04LX3GCT-ND
DescriptionMOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3MOSFET N-Ch 40V 36A CanPAK3 MX OptiMOS 3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseWDSON-2-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current180 A--
Rds On Drain Source Resistance1.2 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge196 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation89 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height0.7 mm--
Length6.35 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.05 mm--
BrandInfineon Technologies--
Forward Transconductance Min65 S--
Fall Time10 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time8.4 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesBSB014N04LX3GXUMA1 BSB14N4LX3GXT SP000597850--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSB014N04LX3 G MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
BSB014N04LX3GXUMA1 MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
BSB014N04LX3GXUMA1 MOSFET N-CH 40V 180A 2WDSON
BSB014N04LX3GXT Trans MOSFET N-CH 40V 36A 7-Pin WDSON - Tape and Reel (Alt: BSB014N04LX3GXUMA1)
BSB014N04LX3G MOSFET N-Ch 40V 36A CanPAK3 MX OptiMOS 3
BSB014N04LX3GCT-ND 全新原装
BSB014N04LX3 G RF Bipolar Transistors MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
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