PartNumber | BSC039N06NSATMA1 | BSC040N08NS5ATMA1 | BSC040N10NS5 |
Description | MOSFET N-Ch 60V 100A TDSON-8 | MOSFET N-Ch 80V 100A TDSON-8 | MOSFET N-Ch 100V 100A TDSON-8 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PG-TDSON-8 | PG-TDSON-8 | PG-TDSON-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 80 V | 100 V |
Id Continuous Drain Current | 100 A | 100 A | 100 A |
Rds On Drain Source Resistance | 3.9 mOhms | 4 mOhms | 4 mOhms |
Vgs th Gate Source Threshold Voltage | 2.1 V | 2.2 V | 2.2 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 27 nC | 43 nC | 58 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 69 W | 104 W | 139 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Series | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 42 S | 45 S | 60 S |
Fall Time | 7 ns | 6 ns | 10 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 12 ns | 8 ns | 9 ns |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns | 25 ns | 32 ns |
Typical Turn On Delay Time | 12 ns | 14 ns | 13 ns |
Part # Aliases | BSC039N06NS BSC39N6NSXT SP000985386 | BSC040N08NS5 SP001132452 | BSC040N10NS5ATMA1 SP001295030 |
Unit Weight | 0.004169 oz | 0.017870 oz | 0.003527 oz |
Development Kit | - | - | EVAL_1K4W_ZVS_FB_CFD7 |
制造商 | 型号 | 描述 | RFQ |
---|---|---|---|
Infineon Technologies |
BSC042NE7NS3 G | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | |
BSC042N03LS G | MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3 | ||
BSC042NE7NS3GATMA1 | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | ||
BSC042N03MS G | MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3M | ||
BSC046N02KS G | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | ||
BSC039N06NSATMA1 | MOSFET N-Ch 60V 100A TDSON-8 | ||
BSC046N10NS3 G | MOSFET N-Ch 100V 100A TDSON-8 | ||
BSC046N10NS3GATMA1 | MOSFET N-Ch 100V 100A TDSON-8 | ||
BSC040N08NS5ATMA1 | MOSFET N-Ch 80V 100A TDSON-8 | ||
BSC040N10NS5ATMA1 | MOSFET N-Ch 100V 100A TDSON-8 | ||
BSC040N10NS5 | MOSFET N-Ch 100V 100A TDSON-8 | ||
BSC039N06NSATMA1 | MOSFET N-CH 60V 19A TDSON-8 | ||
BSC042N03MSGATMA1 | MOSFET N-CH 30V 93A TDSON-8 | ||
BSC042N03S G | MOSFET N-CH 30V 95A TDSON-8 | ||
BSC042NE7NS3GATMA1 | MOSFET N-CH 75V 100A TDSON-8 | ||
BSC046N02KSGAUMA1 | MOSFET N-CH 20V 80A TDSON-8 | ||
BSC042N03LSGATMA1 | MOSFET N-CH 30V 93A TDSON-8 | ||
BSC042N03ST | MOSFET N-CH 30V 50A TDSON-8 | ||
BSC046N10NS3GATMA1 | MOSFET N-Ch 100V 100A TDSON-8 | ||
BSC040N10NS5ATMA1 | MOSFET N-Ch 100V 100A TDSON-8 | ||
BSC040N08NS5ATMA1 | MOSFET N-CH 80V 100A 8TDSON | ||
Infineon Technologies |
BSC046N02KSGAUMA1 | MOSFET LV POWER MOS | |
BSC039N06NS3G | 全新原装 | ||
BSC039N06NSS | 全新原装 | ||
BSC03N06L35 | 全新原装 | ||
BSC040N08NS5 | 全新原装 | ||
BSC040N08NS5 , TDA7449 , | 全新原装 | ||
BSC040N10NS5 | MOSFET N-Ch 100V 100A TDSON-8 | ||
BSC042N03LS | 全新原装 | ||
BSC042N03LSG | Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
BSC042N03LSGATMA1 , TDA7 | 全新原装 | ||
BSC042N03MS | 全新原装 | ||
BSC042N03MS G | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP | ||
BSC042N03MSG | 全新原装 | ||
BSC042N03MSGATMA1 , TDA8 | 全新原装 | ||
BSC042N03S | MOSFET Transistor, N-Channel, LLCC | ||
BSC042N03SG | MOSFET Transistor, N-Channel, LLCC | ||
BSC042NE7NS3 | 全新原装 | ||
BSC042NE7NS3 G | Trans MOSFET N-CH 75V 19A 8-Pin TDSON T/R (Alt: BSC042NE7NS3 G) | ||
BSC042NE7NS3G | Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP | ||
BSC046N02KS | 全新原装 | ||
BSC046N02KS G | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | ||
BSC046N02KSG | 19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
BSC046N10NS | 全新原装 | ||
BSC046N10NS3 G | Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G) | ||
BSC046N10NS3G | POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
BSC047N08NS | 全新原装 | ||
BSC047N08NS3 | 全新原装 | ||
BSC039N08NS5 | MOSFETs | ||
BSC042N03LS G | IGBT Transistors MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3 |