BSC016N03LSG

BSC016N03LSGATMA1 vs BSC016N03LSG vs BSC016N03LSG , TDA18275A

 
PartNumberBSC016N03LSGATMA1BSC016N03LSGBSC016N03LSG , TDA18275A
DescriptionMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineonINFINEON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance1.3 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge131 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min65 S--
Fall Time8.6 ns--
Product TypeMOSFET--
Rise Time8.6 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time51 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesBSC016N03LS BSC16N3LSGXT G SP000237663--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC016N03LSGATMA1 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC016N03LSGATMA1 MOSFET N-CH 30V 100A TDSON8
BSC016N03LSGXT/BKN INSTOCK
BSC016N03LSG Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC016N03LSG , TDA18275A 全新原装
BSC016N03LSGATMA1 , TDA1 全新原装
BSC016N03LSGXT MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
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