 |  | | |
| PartNumber | BSC016N03MSGATMA1 | BSC016N03MSG | BSC016N03MSGXT |
| Description | MOSFET LV POWER MOS | Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | - | |
| Product Category | MOSFET | FETs - Single | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | BSC016N03MS BSC16N3MSGXT G SP000311502 | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC016N03MSGATMA1 | MOSFET LV POWER MOS | |
| BSC016N03MSG | Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC016N03MSGXT | 全新原装 | ||
Infineon Technologies |
BSC016N03MSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 |