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| PartNumber | BSC016N04LSGATMA1 | BSC016N04LSG | BSC016N04LSGS |
| Description | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 1.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 150 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 139 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 95 S | - | - |
| Fall Time | 9.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.6 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 56 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | BSC016N04LS BSC16N4LSGXT G SP000394801 | - | - |
| Unit Weight | 0.004201 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC016N04LSGATMA1 | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | |
| BSC016N04LSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC016N04LSG | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC016N04LSGS | 全新原装 |