| PartNumber | BSC022N04LS | BSC022N04LSATMA1 | BSC022N04LS6ATMA1 |
| Description | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | MOSFET |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 1.8 mOhms | 1.8 mOhms | 2.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 52 nC | 52 nC | 28 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 69 W | 69 W | 79 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 5 | OptiMOS 5 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 90 S | 90 S | 170 S |
| Fall Time | 5 ns | 5 ns | 4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6.8 ns | 6.8 ns | 2.1 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 26 ns | 16 ns |
| Typical Turn On Delay Time | 6.1 ns | 6.1 ns | 5 ns |
| Part # Aliases | BSC022N04LSATMA1 SP001059844 | BSC022N04LS SP001059844 | - |
| Unit Weight | - | 0.004171 oz | - |