 |  | | |
| PartNumber | BSC028N06LS3 G | BSC028N06LS | BSC028N06LS 3G |
| Description | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 175 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 139 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 60 S | - | - |
| Fall Time | 19 ns | 19 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 17 ns | 17 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 77 ns | 77 ns | - |
| Typical Turn On Delay Time | 19 ns | 19 ns | - |
| Part # Aliases | BSC028N06LS3GATMA1 BSC28N6LS3GXT SP000453652 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Part Aliases | - | BSC028N06LS3GATMA1 BSC028N06LS3GXT SP000453652 | - |
| Package Case | - | TDSON-8 | - |
| Pd Power Dissipation | - | 2.5 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 23 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 2.8 mOhms | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC028N06LS3 G | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | |
| BSC028N06LS3GATMA1 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC028N06LS3GATMA1 | MOSFET N-CH 60V 100A TDSON-8 | ||
| BSC028N06LS | 全新原装 | ||
| BSC028N06LS 3G | 全新原装 | ||
| BSC028N06LS3 G | Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP | ||
| BSC028N06LS3G | 23 A, 60 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC028N06LS3G , TDA6503A | 全新原装 |