 | | | |
| PartNumber | BSC032NE2LSATMA1 | BSC034N03LS G | BSC032NE2LS |
| Description | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 30 V | 25 V |
| Id Continuous Drain Current | 84 A | 100 A | 84 A |
| Rds On Drain Source Resistance | 2.7 mOhms | 2.8 mOhms | 2.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 21 nC | 52 nC | 21 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 37 W | 57 W | 37 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 46 S | 45 S | 46 S |
| Fall Time | 2.2 ns | 4.6 ns | 2.2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.8 ns | 4.8 ns | 2.8 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | 28 ns | 15 ns |
| Typical Turn On Delay Time | 3.3 ns | 6.9 ns | 3.3 ns |
| Part # Aliases | BSC032NE2LS BSC32NE2LSXT SP000854378 | BSC034N03LSGATMA1 BSC34N3LSGXT SP000475948 | BSC032NE2LSATMA1 BSC32NE2LSXT SP000854378 |
| Unit Weight | 0.004156 oz | 0.004938 oz | 0.006702 oz |
| Series | - | OptiMOS 3 | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC036NE7NS3 G | MOSFET N-Ch 75V 100A TDSON-8 | |
| BSC039N06NS | MOSFET N-Ch 60V 100A TDSON-8 | ||
| BSC037N08NS5ATMA1 | MOSFET N-Ch 80V 100A TDSON-8 | ||
| BSC036NE7NS3GATMA1 | MOSFET N-Ch 75V 100A TDSON-8 | ||
| BSC035N04LS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC035N04LSGATMA1 | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC034N03LSGATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC039N06NSATMA1 | MOSFET N-Ch 60V 100A TDSON-8 | ||
| BSC032NE2LSATMA1 | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | ||
| BSC034N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC032NE2LS | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | ||
| BSC035N10NS5ATMA1 | MOSFET 100VPower transistor OptiMOS 5 | ||
| BSC034N06NSATMA1 | MOSFET MV POWER MOS | ||
| BSC034N06NS | MOSFET DIFFERENTIATED MOSFETS | ||
| BSC037N08NS5TATMA1 | MOSFET TRENCH 40<-<100V | ||
| BSC032NE2LS | Trans MOSFET N-CH 25V 22A 8-Pin TDSON EP | ||
| BSC032NE2LSATMA1 | MOSFET N-CH 25V 22A TDSON-8 | ||
| BSC034N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC034N03LSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
| BSC034N06NS | MOSFET DIFFERENTIATED MOSFETS | ||
| BSC035N04LS G | Trans MOSFET N-CH 40V 21A 8-Pin TDSON EP | ||
| BSC035N10NS5ATMA1 | MOSFET N-CH 100V 100A TDSON-8 | ||
| BSC036NE7NS3 G | Trans MOSFET N-CH 75V 20A 8-Pin TDSON T/R (Alt: BSC036NE7NS3 G) | ||
| BSC037N025S G | MOSFET N-CH 25V 100A TDSON-8 | ||
| BSC039N06NS | Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP | ||
| BSC039N06NSATMA1 | MOSFET N-CH 60V 19A TDSON-8 | ||
| BSC034N06NSATMA1 | MOSFET N-CH 60V 100A 8TDSON | ||
| BSC035N04LSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC036NE7NS3GATMA1 | MOSFET N-Ch 75V 100A TDSON-8 | ||
| BSC037N08NS5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 80V 100A TDSON-8 | ||
| BSC036NE7NS3GXT | Trans MOSFET N-CH 75V 20A 8-Pin TDSON - Tape and Reel (Alt: BSC036NE7NS3GATMA1) | ||
| BSC034N03LSGATMA1 , TDA7 | 全新原装 | ||
| BSC035N04LS G (SP0003915 | 全新原装 | ||
| BSC035N04LSGATMA1 , TDA7 | 全新原装 | ||
| BSC035N10NS5(SP001229628 | 全新原装 | ||
| BSC037N03LSCG | 全新原装 | ||
| BSC039N06NS3G | 全新原装 | ||
| BSC039N06NSS | 全新原装 | ||
| BSC039N08NS5 | MOSFETs | ||
| BSC032N04LSATMA1-CUT TAPE | 全新原装 | ||
| BSC034N06NSATMA1-CUT TAPE | 全新原装 | ||
| BSC034N03LSG | 全新原装 | ||
| BSC035N04LG | 全新原装 | ||
| BSC035N04LSG | Trans MOSFET N-CH 40V 21A 8-Pin TDSON EP | ||
| BSC035N10NS5 | 全新原装 | ||
| BSC036NE7NS3G | POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 75V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSC037N025S | 全新原装 | ||
| BSC037N03MSCG | 全新原装 | ||
| BSC037N08NS5 | Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP | ||
| BSC03N06L35 | 全新原装 |