 | | | |
| PartNumber | BSC030N03MS G | BSC030N03LSGATMA1 | BSC030N03LS G |
| Description | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 2.5 mOhms | 2.5 mOhms | 3 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 73 nC | 55 nC | 55 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 69 W | 69 W | 69 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3M | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 48 S | 49 S | 49 S |
| Fall Time | 9.4 ns | 4.8 ns | 4.8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 5.2 ns | 5.2 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 23 ns | 29 ns | 29 ns |
| Typical Turn On Delay Time | 19 ns | 7.3 ns | 7.3 ns |
| Part # Aliases | BSC030N03MSGATMA1 BSC3N3MSGXT SP000311506 | BSC030N03LS BSC3N3LSGXT G SP000237661 | BSC030N03LSGATMA1 BSC3N3LSGXT SP000237661 |
| Unit Weight | - | 0.070548 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC030N03MS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | |
| BSC030N03MSGATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | ||
| BSC030N03LSGATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC030N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC030N03LSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
| BSC030N03MSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
| BSC030N03LS | 全新原装 | ||
| BSC030N03LS G | Trans MOSFET N-CH 30V 23A 8-Pin TDSON T/R (Alt: BSC030N03LS G) | ||
| BSC030N03LSG | Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC030N03LSGATMA1INFINEO | 全新原装 | ||
| BSC030N03MS | 全新原装 | ||
| BSC030N03MS G | Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP | ||
| BSC030N03MSG | 全新原装 | ||
| BSC030N03MSGATMA1 , TDA7 | 全新原装 | ||
| BSC030N03MSGXT/BKN | 全新原装 | ||
| BSC030N03SL | 全新原装 |