BSC030N04

BSC030N04NS G vs BSC030N04NS vs BSC030N04NSG

 
PartNumberBSC030N04NS GBSC030N04NSBSC030N04NSG
DescriptionMOSFET N-Ch 40V 100A TDSON-8 OptiMOS 340V,100A,N Channel Power MOSFET
ManufacturerInfineonINFINEONINFINEO
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance2.5 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge61 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation83 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel-Digi-ReelR Alternate Packaging
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3-OptiMOS
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min46 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time4 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesBSC030N04NSGATMA1 BSC3N4NSGXT SP000354811--
Unit Weight0.070548 oz--
Package Case--8-PowerTDFN
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--PG-TDSON-8
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--83W
Drain to Source Voltage Vdss--40V
Input Capacitance Ciss Vds--4900pF @ 20V
FET Feature--Standard
Current Continuous Drain Id 25°C--23A (Ta), 100A (Tc)
Rds On Max Id Vgs--3 mOhm @ 50A, 10V
Vgs th Max Id--4V @ 49μA
Gate Charge Qg Vgs--61nC @ 10V
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC030N04NS G MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC030N04NSGXT MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC030N04NSGATMA1 MOSFET N-CH 40V 100A TDSON-8
BSC030N04NS 全新原装
BSC030N04NS G MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC030N04NSG 40V,100A,N Channel Power MOSFET
BSC030N04NSGATMA1 , TDA7 全新原装
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