BSC034N03

BSC034N03LSGATMA1 vs BSC034N03LS G vs BSC034N03LSG

 
PartNumberBSC034N03LSGATMA1BSC034N03LS GBSC034N03LSG
DescriptionMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance2.8 mOhms2.8 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge52 nC52 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation57 W57 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min45 S45 S-
Fall Time4.6 ns4.6 ns-
Product TypeMOSFETMOSFET-
Rise Time4.8 ns4.8 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time28 ns28 ns-
Typical Turn On Delay Time6.9 ns6.9 ns-
Part # AliasesBSC034N03LS BSC34N3LSGXT G SP000475948BSC034N03LSGATMA1 BSC34N3LSGXT SP000475948-
Unit Weight0.004205 oz0.004938 oz-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC034N03LSGATMA1 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC034N03LS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC034N03LSGATMA1 MOSFET N-CH 30V 100A TDSON-8
BSC034N03LS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC034N03LSG 全新原装
BSC034N03LSGATMA1 , TDA7 全新原装
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