BSC042NE

BSC042NE7NS3 G vs BSC042NE7NS3 vs BSC042NE7NS3G

 
PartNumberBSC042NE7NS3 GBSC042NE7NS3BSC042NE7NS3G
DescriptionMOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP
ManufacturerInfineonINFINEONInfineon
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance3.7 mOhms--
Vgs th Gate Source Threshold Voltage2.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge69 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
TypeOptiMOS 3 Power-Transistor--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min44 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time17 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time34 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesBSC042NE7NS3GATMA1 BSC42NE7NS3GXT SP000657440--
Unit Weight0.003527 oz--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC042NE7NS3 G MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
BSC042NE7NS3GATMA1 MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
BSC042NE7NS3GATMA1 MOSFET N-CH 75V 100A TDSON-8
BSC042NE7NS3 全新原装
BSC042NE7NS3 G Trans MOSFET N-CH 75V 19A 8-Pin TDSON T/R (Alt: BSC042NE7NS3 G)
BSC042NE7NS3G Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP
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