BSC054N04NSGA

BSC054N04NSGATMA1 vs BSC054N04NSGAT vs BSC054N04NSGATMA1 , TDA8

 
PartNumberBSC054N04NSGATMA1BSC054N04NSGATBSC054N04NSGATMA1 , TDA8
DescriptionMOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current81 A--
Rds On Drain Source Resistance4.5 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge34 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation57 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelDigi-ReelR Alternate Packaging-
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3OptiMOS-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min34 S--
Fall Time3.6 ns--
Product TypeMOSFET--
Rise Time2.6 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesBSC054N04NS BSC54N4NSGXT G SP000354808--
Part Aliases-BSC054N04NS BSC054N04NSGXT G SP000354808-
Package Case-8-PowerTDFN-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-PG-TDSON-8-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-57W-
Drain to Source Voltage Vdss-40V-
Input Capacitance Ciss Vds-2800pF @ 20V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-17A (Ta), 81A (Tc)-
Rds On Max Id Vgs-5.4 mOhm @ 50A, 10V-
Vgs th Max Id-4V @ 27μA-
Gate Charge Qg Vgs-34nC @ 10V-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC054N04NSGATMA1 MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
BSC054N04NSGATMA1 MOSFET N-CH 40V 81A TDSON-8
BSC054N04NSGAT 全新原装
BSC054N04NSGATMA1 , TDA8 全新原装
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