BSC060N10NS

BSC060N10NS3 G vs BSC060N10NS3GATMA1

 
PartNumberBSC060N10NS3 GBSC060N10NS3GATMA1
DescriptionMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current90 A90 A
Rds On Drain Source Resistance5.3 mOhms5.3 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge68 nC68 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation125 W125 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height1.27 mm1.27 mm
Length5.9 mm5.9 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min43 S43 S
Fall Time12 ns12 ns
Product TypeMOSFETMOSFET
Rise Time16 ns16 ns
Factory Pack Quantity50005000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time45 ns45 ns
Typical Turn On Delay Time20 ns20 ns
Part # AliasesBSC060N10NS3GATMA1 BSC6N1NS3GXT SP000446584BSC060N10NS3 BSC6N1NS3GXT G SP000446584
Unit Weight0.003527 oz0.004030 oz
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC060N10NS3 G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
BSC060N10NS3GATMA1 MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
BSC060N10NS3 G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
BSC060N10NS3GATMA1 MOSFET N-CH 100V 90A TDSON-8
BSC060N10NS 全新原装
BSC060N10NS3 全新原装
BSC060N10NS3G Trans MOSFET N-CH 100V 14.9A 8-Pin TDSON T/R (Alt: BSC060N10NS3 G)
BSC060N10NS3GATMA1 , TDA 全新原装
Top