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| PartNumber | BSC070N10NS3GATMA1 | BSC070N10NS3 G | BSC070N10NS5ATMA1 |
| Description | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | MOSFET N-Ch 100V 90A TDSON-8 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 90 A | 90 A | 80 A |
| Rds On Drain Source Resistance | 7 mOhms | 6.3 mOhms | 7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2.2 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 10 V |
| Qg Gate Charge | 42 nC | 55 nC | 30 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 114 W | 114 W | 83 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 36 S | 36 S | 38 S |
| Fall Time | 8 ns | 8 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns | 5 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | 29 ns | 24 ns |
| Typical Turn On Delay Time | 15 ns | 15 ns | 13 ns |
| Part # Aliases | BSC070N10NS3 BSC7N1NS3GXT G SP000778082 | BSC070N10NS3GATMA1 BSC7N1NS3GXT SP000778082 | BSC070N10NS5 SP001241596 |
| Unit Weight | 0.010582 oz | 0.003527 oz | 0.017870 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC070N10NS3GATMA1 | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | |
| BSC070N10NS3 G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | ||
| BSC070N10NS5ATMA1 | MOSFET N-Ch 100V 90A TDSON-8 | ||
| BSC070N10NS3 G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | ||
| BSC070N10NS3GATMA1 | MOSFET N-CH 100V 90A TDSON-8 | ||
| BSC070N10NS5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 100V 90A TDSON-8 | ||
| BSC070N10NS | 全新原装 | ||
| BSC070N10NS3G | Trans MOSFET N-CH 100V 90A 8-Pin TDSON T/R (Alt: BSC070N10NS3 G) | ||
| BSC070N10NS5 | Trans MOSFET N-CH 100V 90A 8-Pin TDSON T/R (Alt: BSC070N10NS5) | ||
| BSC070N10NS5ATMA1-CUT TAPE | 全新原装 | ||
| BSC070N10NS5G | 全新原装 |