BSC077N12NS

BSC077N12NS3 G vs BSC077N12NS vs BSC077N12NS3

 
PartNumberBSC077N12NS3 GBSC077N12NSBSC077N12NS3
DescriptionMOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
ManufacturerInfineon-INFINEON
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Id Continuous Drain Current98 A--
Rds On Drain Source Resistance6.6 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge88 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation139 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
TypeOptiMOS 3 Power-Transistor--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min40 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesBSC077N12NS3GATMA1 BSC77N12NS3GXT SP000652750--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC077N12NS3 G MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
BSC077N12NS3GATMA1 MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
BSC077N12NS3GATMA1 MOSFET N-CH 120V 98A 8TDSON
BSC077N12NS 全新原装
BSC077N12NS3 全新原装
BSC077N12NS3 G Trans MOSFET N-CH 120V 13.4A 8-Pin TDSON T/R (Alt: BSC077N12NS3 G)
BSC077N12NS3G MOSFET N-CHANNEL 120V 13.4A TDSON8EP, EA
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