 | | | |
| PartNumber | BSC079N10NS | BSC079N10NS3G | BSC079N10NS G |
| Description | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | ||
| Manufacturer | INFINEON | INF | Infineon Technologies |
| Product Category | FETs - Single | IC Chips | Transistors - FETs, MOSFETs - Single |
| Series | - | - | OptiMOS 2 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | BSC079N10NSGATMA1 BSC079N10NSGXT SP000379590 |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TDSON-8 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single Quad Drain Triple Source |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 156 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 11 ns |
| Rise Time | - | - | 40 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 13.4 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 7.9 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 38 ns |
| Typical Turn On Delay Time | - | - | 24 ns |
| Channel Mode | - | - | Enhancement |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC079N10NSGATMA1 | MOSFET MV POWER MOS | |
| BSC079N10NSGXT | Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N10NSGATMA1) | ||
| BSC079N10NS | 全新原装 | ||
| BSC079N10NS3G | 全新原装 | ||
| BSC079N10NSG | 100V,100A,N Channel Power MOSFET | ||
| BSC079N10NSGS | 全新原装 | ||
| BSC079N10NS G | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | ||
Infineon Technologies |
BSC079N10NSGATMA1 | MOSFET N-CH 100V 100A TDSON-8 |