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| PartNumber | BSC093N04LS G | BSC093N15NS5ATMA1 | BSC093N04LSGATMA1 |
| Description | MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 | MOSFET MV POWER MOS | MOSFET N-CH 40V 49A TDSON-8 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | PG-TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 150 V | - |
| Id Continuous Drain Current | 49 A | 87 A | - |
| Rds On Drain Source Resistance | 9.3 mOhms | 9.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 18 nC | 33 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 35 W | 139 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 3 | OptiMOS 5 | OptiMOS |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 34 S | 34 S | - |
| Fall Time | 2.8 ns | 3.8 ns | 2.8 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.4 ns | 4.3 ns | 2.4 ns |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 16 ns | 14.4 ns | 16 ns |
| Typical Turn On Delay Time | 3.6 ns | 14 ns | 3.6 ns |
| Part # Aliases | BSC093N04LSGATMA1 BSC93N4LSGXT SP000387929 | BSC093N15NS5 SP001279590 | - |
| Unit Weight | 0.003527 oz | 0.003527 oz | - |
| Part Aliases | - | - | BSC093N04LS BSC093N04LSGXT G SP000387929 |
| Package Case | - | - | 8-PowerTDFN |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-TDSON-8 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 35W |
| Drain to Source Voltage Vdss | - | - | 40V |
| Input Capacitance Ciss Vds | - | - | 1900pF @ 20V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 13A (Ta), 49A (Tc) |
| Rds On Max Id Vgs | - | - | 9.3 mOhm @ 40A, 10V |
| Vgs th Max Id | - | - | 2V @ 14μA |
| Gate Charge Qg Vgs | - | - | 24nC @ 10V |
| Pd Power Dissipation | - | - | 35 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 49 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Rds On Drain Source Resistance | - | - | 9.3 mOhms |
| Qg Gate Charge | - | - | 18 nC |
| Forward Transconductance Min | - | - | 67 S |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC093N04LS G | MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 | |
| BSC093N15NS5ATMA1 | MOSFET MV POWER MOS | ||
| BSC093N04LSGATMA1 | MOSFET N-CH 40V 49A TDSON-8 | ||
| BSC093N15NS5ATMA1 | MOSFET N-CH 150V 87A TDSON-8 | ||
| BSC093N04LS | 全新原装 | ||
| BSC093N04LS G | Trans MOSFET N-CH 40V 13A 8-Pin TDSON T/R (Alt: BSC093N04LS G) | ||
| BSC093N04LSG | 40V,49A,N Channel Power MOSFET | ||
| BSC093N04LSGATMA1 , TDZ | 全新原装 | ||
| BSC093N15NS5 | 全新原装 | ||
| BSC093N04LSGATMA1-CUT TAPE | 全新原装 | ||
| BSC093N15NS5ATMA1-CUT TAPE | 全新原装 |