BSC093N04LSGA

BSC093N04LSGATMA1 vs BSC093N04LSGATMA1 , TDZ vs BSC093N04LSGATMA1-CUT TAPE

 
PartNumberBSC093N04LSGATMA1BSC093N04LSGATMA1 , TDZBSC093N04LSGATMA1-CUT TAPE
DescriptionMOSFET N-CH 40V 49A TDSON-8
ManufacturerInfineon Technologies--
Product CategoryFETs - Single--
SeriesOptiMOS--
PackagingDigi-ReelR Alternate Packaging--
Part AliasesBSC093N04LS BSC093N04LSGXT G SP000387929--
Mounting StyleSMD/SMT--
TradenameOptiMOS--
Package Case8-PowerTDFN--
TechnologySi--
Operating Temperature-55°C ~ 150°C (TJ)--
Mounting TypeSurface Mount--
Number of Channels1 Channel--
Supplier Device PackagePG-TDSON-8--
ConfigurationSingle--
FET TypeMOSFET N-Channel, Metal Oxide--
Power Max35W--
Transistor Type1 N-Channel--
Drain to Source Voltage Vdss40V--
Input Capacitance Ciss Vds1900pF @ 20V--
FET FeatureLogic Level Gate--
Current Continuous Drain Id 25°C13A (Ta), 49A (Tc)--
Rds On Max Id Vgs9.3 mOhm @ 40A, 10V--
Vgs th Max Id2V @ 14μA--
Gate Charge Qg Vgs24nC @ 10V--
Pd Power Dissipation35 W--
Maximum Operating Temperature+ 150 C--
Minimum Operating Temperature- 55 C--
Fall Time2.8 ns--
Rise Time2.4 ns--
Vgs Gate Source Voltage+/- 20 V--
Id Continuous Drain Current49 A--
Vds Drain Source Breakdown Voltage40 V--
Vgs th Gate Source Threshold Voltage2 V--
Rds On Drain Source Resistance9.3 mOhms--
Transistor PolarityN-Channel--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time3.6 ns--
Qg Gate Charge18 nC--
Forward Transconductance Min67 S--
Channel ModeEnhancement--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC093N04LSGATMA1 MOSFET N-CH 40V 49A TDSON-8
BSC093N04LSGATMA1 , TDZ 全新原装
BSC093N04LSGATMA1-CUT TAPE 全新原装
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