BSC123N08NS

BSC123N08NS3 G vs BSC123N08NS3 vs BSC123N08NS3G

 
PartNumberBSC123N08NS3 GBSC123N08NS3BSC123N08NS3G
DescriptionMOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3Trans MOSFET N-CH 80V 11A 8-Pin TDSON (Alt: BSC123N08NS3 G)
ManufacturerInfineonINFINEONINFINEON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current55 A--
Rds On Drain Source Resistance10.3 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge25 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation66 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min22 S--
Fall Time4 ns--
Product TypeMOSFET--
Rise Time18 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesBSC123N08NS3GATMA1 BSC123N8NS3GXT SP000443916--
Unit Weight0.003527 oz--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC123N08NS3 G MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
BSC123N08NS3GATMA1 MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
BSC123N08NS3GATMA1 MOSFET N-CH 80V 55A TDSON-8
BSC123N08NS3GXT Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1)
BSC123N08NS3 全新原装
BSC123N08NS3 G Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP
BSC123N08NS3G Trans MOSFET N-CH 80V 11A 8-Pin TDSON (Alt: BSC123N08NS3 G)
BSC123N08NS3GATMA1 , TDZ 全新原装
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