BSC123N10LSG

BSC123N10LSGATMA1 vs BSC123N10LSG vs BSC123N10LSGATMA1 , TDZ7

 
PartNumberBSC123N10LSGATMA1BSC123N10LSGBSC123N10LSGATMA1 , TDZ7
DescriptionMOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current71 A--
Rds On Drain Source Resistance10 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge68 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation114 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 2BSC123N10-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min49 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesBSC123N10LS BSC123N1LSGXT G SP000379612--
Unit Weight0.005855 oz--
Part Aliases-BSC123N10LS BSC123N10LSGXT G SP000379612-
Package Case-TDSON-8-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC123N10LSGATMA1 MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
BSC123N10LSGATMA1 MOSFET N-CH 100V 71A TDSON-8
BSC123N10LSG Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP
BSC123N10LSGATMA1 , TDZ7 全新原装
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