BSC13

BSC130P03LS G vs BSC130P03LSGAUMA1 vs BSC13DN30NSFDATMA1

 
PartNumberBSC130P03LS GBSC130P03LSGAUMA1BSC13DN30NSFDATMA1
DescriptionMOSFET P-Ch -30V -22.5A TDSON-8 OptiMOS PMOSFET SMALL SIGNAL+P-CHMOSFET N-CH 300V 16A 8TDSON
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current22.5 A--
Rds On Drain Source Resistance13 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS P--
Transistor Type1 P-Channel1 P-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time35.1 ns--
Moisture SensitiveYes--
Product TypeMOSFETMOSFET-
Rise Time65.6 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time43.5 ns--
Typical Turn On Delay Time11.4 ns--
Part # AliasesBSC130P03LSGAUMA1 BSC13P3LSGXT SP000359666BSC130P03LS BSC13P3LSGXT G SP000359666-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC130P03LS G MOSFET P-Ch -30V -22.5A TDSON-8 OptiMOS P
BSC13DN30NSFDATMA1 MOSFET N-CH 300V 16A 8TDSON
BSC130P03LSGAUMA1 MOSFET P-CH 30V 22.5A TDSON-8
Infineon Technologies
Infineon Technologies
BSC130P03LSGAUMA1 MOSFET SMALL SIGNAL+P-CH
BSC130N03M 全新原装
BSC130P03LSG Trans MOSFET P-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC130P03LS G)
BSC130P03LSGAUMA1 , TDZF 全新原装
BSC130P03LS G IGBT Transistors MOSFET P-Ch -30V -22.5A TDSON-8 OptiMOS P
Top