BSC360N15NS3

BSC360N15NS3 G vs BSC360N15NS3GATMA1 vs BSC360N15NS3G

 
PartNumberBSC360N15NS3 GBSC360N15NS3GATMA1BSC360N15NS3G
DescriptionMOSFET N-Ch 150V 33A TDSON-8 OptiMOS 3MOSFET MV POWER MOS
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETIC Chips
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current33 A--
Rds On Drain Source Resistance36 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation74 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time4 ns--
Product TypeMOSFETMOSFET-
Rise Time6 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesBSC360N15NS3GATMA1 BSC36N15NS3GXT SP000778134BSC360N15NS3 BSC36N15NS3GXT G SP000778134-
Unit Weight0.003527 oz--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC360N15NS3 G MOSFET N-Ch 150V 33A TDSON-8 OptiMOS 3
BSC360N15NS3GATMA1 MOSFET N-CH 150V 33A 8TDSON
Infineon Technologies
Infineon Technologies
BSC360N15NS3GATMA1 MOSFET MV POWER MOS
BSC360N15NS3G 全新原装
BSC360N15NS3GS 全新原装
BSC360N15NS3 G Darlington Transistors MOSFET N-Ch 150V 33A TDSON-8 OptiMOS 3
Top