BSC44

BSC440N10NS3 G vs BSC440N10N vs BSC440N10NS3G

 
PartNumberBSC440N10NS3 GBSC440N10NBSC440N10NS3G
DescriptionMOSFET N-Ch 100V 18A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current5.3 A--
Rds On Drain Source Resistance44 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation29 W--
ConfigurationSingleSingle Quad Drain Triple Source-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm--
BrandInfineon Technologies--
Fall Time3 ns3 ns-
Product TypeMOSFET--
Rise Time3 ns3 ns-
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns13 ns-
Typical Turn On Delay Time9 ns9 ns-
Part # AliasesBSC440N10NS3GATMA1 BSC44N1NS3GXT SP000482420--
Unit Weight0.010582 oz--
Part Aliases-BSC440N10NS3GATMA1 BSC440N10NS3GXT SP000482420-
Package Case-TDSON-8-
Pd Power Dissipation-29 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-5.3 A-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-44 mOhms-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC440N10NS3 G MOSFET N-Ch 100V 18A TDSON-8 OptiMOS 3
BSC440N10NS3GATMA1 MOSFET N-CH 100V 18A TDSON-8
BSC440N10NS3GXT Trans MOSFET N-CH 100V 5.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC440N10NS3GATMA1)
BSC440N10N 全新原装
BSC440N10NS3G 全新原装
BSC440N10NS3GATMA1 , TDZ 全新原装
BSC440N10NS3 G MOSFET N-Ch 100V 18A TDSON-8 OptiMOS 3
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