 | |  | |
| PartNumber | BSD314SPEH6327XTSA1 | BSD316SN H6327 | BSD314SPEL6327HTSA1 |
| Description | MOSFET P-Ch 30V -1.5A SOT-363-3 | MOSFET SMALL SIGNAL N-CH | MOSFET P-CH 30V 1.5A SOT363 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 1.5 A | 1.4 A | - |
| Rds On Drain Source Resistance | 230 mOhms | 120 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | - 700 pC | 600 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 0.9 mm | 0.9 mm | - |
| Length | 2 mm | 2 mm | - |
| Series | BSD314 | BSD316 | - |
| Transistor Type | 1 P-Channel | 1 N-Channel | - |
| Width | 1.25 mm | 1.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 3 S | 2.3 S | - |
| Fall Time | 2.8 ns | 1 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3.9 ns | 2.3 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 12.4 ns | 5.8 ns | - |
| Typical Turn On Delay Time | 5.1 ns | 3.4 ns | - |
| Part # Aliases | BSD314SPE BSD314SPEH6327XT H6327 SP000917658 | BSD316SNH6327XTSA1 SP000917668 | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSD314SPEH6327XTSA1 | MOSFET P-Ch 30V -1.5A SOT-363-3 | |
| BSD316SNH6327XTSA1 | MOSFET SMALL SIGNAL N-CH | ||
| BSD316SN H6327 | MOSFET SMALL SIGNAL N-CH | ||
| BSD340NH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSD314SPEL6327HTSA1 | MOSFET P-CH 30V 1.5A SOT363 | ||
| BSD316SNH6327XTSA1 | MOSFET N-CH 30V 1.4A SOT363 | ||
| BSD316SNL6327XT | MOSFET N-CH 30V 1.4A SOT-363 | ||
| BSD340NH6327XTSA1 | SMALL SIGNAL+P-CH | ||
| BSD314SPEH6327XTSA1 | IGBT Transistors MOSFET P-Ch 30V -1.5A SOT-363-3 | ||
| BSD314SPEL6327XT | Trans MOSFET P-CH 30V 1.5A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD314SPEL6327HTSA1) | ||
| BSD3-24S05 | 全新原装 | ||
| BSD30-48D05-05 | 全新原装 | ||
| BSD30-48S24 | 全新原装 | ||
| BSD314SPE | 全新原装 | ||
| BSD314SPE H6327 | MOSFET, P-CH, AEC-Q101, 30V, -1.5A | ||
| BSD314SPE6327 | 全新原装 | ||
| BSD314SPEH6327 | -30V,-1.5A,P-Ch Small-Signal MOSFET | ||
| BSD314SPEH6327XT | 全新原装 | ||
| BSD314SPEL6327 | Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSD316NL6327 | 全新原装 | ||
| BSD316SN | 全新原装 | ||
| BSD316SN H6327 | MOSFET SMALL SIGNAL N-CH | ||
| BSD316SN L6327 | MOSFET N-Ch 30V 1.4A SOT-363-6 | ||
| BSD316SN6327 | 全新原装 | ||
| BSD316SNH6327 | 全新原装 | ||
| BSD316SNL6327 | 全新原装 | ||
| BSD340N | 全新原装 | ||
| BSD356PE | 全新原装 | ||
| BSD39 | 全新原装 | ||
| BSD3A151V | 全新原装 | ||
| BSD3A241V | 全新原装 | ||
| BSD3C031L | 全新原装 | ||
| BSD3C031LX | 全新原装 | ||
| BSD3C031V | 全新原装 | ||
| BSD3C051L | 全新原装 | ||
| BSD3C051RF2 | 全新原装 | ||
| BSD3C121V | 全新原装 | ||
| BSD3C151V | 全新原装 | ||
| BSD3C241V | 全新原装 | ||
| BSD3C361L | 全新原装 | ||
| BSD314SPE L6327 | IGBT Transistors MOSFET P-Ch -30V -1.5A SOT-363-6 |