BSL202SNH

BSL202SNH6327XTSA1 vs BSL202SNH6327

 
PartNumberBSL202SNH6327XTSA1BSL202SNH6327
DescriptionMOSFET SMALL SIGNAL+N-CH
ManufacturerInfineonInfineon Technologies
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single
RoHSY-
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTSOP-6-
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V-
Id Continuous Drain Current7.5 A-
Rds On Drain Source Resistance36 mOhms-
Vgs th Gate Source Threshold Voltage700 mV-
Vgs Gate Source Voltage12 V-
Qg Gate Charge8.7 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation2 W-
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height1.1 mm-
Length3 mm-
Width1.5 mm-
BrandInfineon Technologies-
Forward Transconductance Min25 S-
Fall Time4.06 ns4.06 ns
Product TypeMOSFET-
Rise Time27.5 ns27.5 ns
Factory Pack Quantity3000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time18.9 ns18.9 ns
Typical Turn On Delay Time8.26 ns8.26 ns
Part # AliasesBSL202SN H6327 SP001100644-
Unit Weight0.000705 oz0.000705 oz
Part Aliases-BSL202SN H6327 SP001100644
Package Case-TSOP-6
Transistor Type-1 P-Channel
Pd Power Dissipation-2 W
Vgs Gate Source Voltage-12 V
Id Continuous Drain Current-7.5 A
Vds Drain Source Breakdown Voltage-20 V
Vgs th Gate Source Threshold Voltage-700 mV
Rds On Drain Source Resistance-22 mOhms
Qg Gate Charge-5.8 nC
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSL202SNH6327XTSA1 MOSFET SMALL SIGNAL+N-CH
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BSL202SNH6327 全新原装
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