BSL211S

BSL211SPH6327XTSA1 vs BSL211SP vs BSL211SPL6327HTSA1

 
PartNumberBSL211SPH6327XTSA1BSL211SPBSL211SPL6327HTSA1
DescriptionMOSFET SMALL SIGNAL+P-CHMOSFET P-Ch -20V -4.7A TSOP-6 OptiMOS PMOSFET P-CH 20V 4.7A TSOP-6
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-6TSOP-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current4.7 A4.7 A-
Rds On Drain Source Resistance110 mOhms67 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge- 1.3 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2 W2 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3 mm3 mm-
Transistor Type1 P-Channel1 P-Channel-
Width1.5 mm1.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min6.2 S--
Fall Time23.3 ns23.3 ns-
Product TypeMOSFETMOSFET-
Rise Time13.9 ns13.9 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time25 ns25 ns-
Typical Turn On Delay Time8.7 ns8.7 ns-
Part # AliasesBSL211SP H6327 SP001100652BSL211SPH6327XTSA1 SP001100652-
Unit Weight0.010582 oz0.000705 oz-
Tradename-OptiMOS-
Series-OptiMOS P-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSL211SPH6327XTSA1 MOSFET SMALL SIGNAL+P-CH
BSL211SP MOSFET P-CH 20V 4.7A 6-TSOP
BSL211SPL6327HTSA1 MOSFET P-CH 20V 4.7A TSOP-6
BSL211SPT MOSFET P-CH 20V 4.7A 6-TSOP
BSL211SPH6327XTSA1 IGBT Transistors MOSFET SMALL SIGNAL+P-CH
Infineon Technologies
Infineon Technologies
BSL211SP MOSFET P-Ch -20V -4.7A TSOP-6 OptiMOS P
BSL211SP L6327 全新原装
BSL211SP E6327 全新原装
BSL211SP H6327 全新原装
BSL211SP(INFINEON) 全新原装
BSL211SPE6327 全新原装
BSL211SPL6327 全新原装
BSL211SP L6327 IGBT Transistors MOSFET P-Ch -20V 4.7A TSOP-6
Top