BSL302SNH

BSL302SNH6327XTSA1 vs BSL302SNH6327

 
PartNumberBSL302SNH6327XTSA1BSL302SNH6327
DescriptionMOSFET SMALL SIGNAL+N-CH30V,25m��,7.1A,N-Ch Small-Signal MOSFET
ManufacturerInfineonInfineon Technologies
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single
RoHSY-
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePG-TSOP-6-
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelP-Channel
Vds Drain Source Breakdown Voltage30 V-
Id Continuous Drain Current7.1 A-
Rds On Drain Source Resistance25 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V-
Vgs Gate Source Voltage10 V-
Qg Gate Charge4.4 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation2 W-
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height1.1 mm-
Length3 mm-
Transistor Type1 N-Channel1 P-Channel
Width1.5 mm-
BrandInfineon Technologies-
Forward Transconductance Min16 S-
Fall Time1.9 ns1.9 ns
Product TypeMOSFET-
Rise Time2.8 ns2.8 ns
Factory Pack Quantity3000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time13.7 ns13.7 ns
Typical Turn On Delay Time6.4 ns6.4 ns
Part # AliasesBSL302SN H6327 SP001100662-
Unit Weight0.000529 oz-
Part Aliases-BSL302SN H6327 SP001100662
Package Case-TSOP-6
Pd Power Dissipation-2 W
Vgs Gate Source Voltage-20 V
Id Continuous Drain Current-7.1 A
Vds Drain Source Breakdown Voltage-30 V
Vgs th Gate Source Threshold Voltage-1.2 V
Rds On Drain Source Resistance-25 mOhms
Qg Gate Charge-4.4 nC
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSL302SNH6327XTSA1 MOSFET SMALL SIGNAL+N-CH
BSL302SNH6327XTSA1 IGBT Transistors MOSFET SMALL SIGNAL+P-CH
BSL302SNH6327 30V,25m��,7.1A,N-Ch Small-Signal MOSFET
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