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| PartNumber | BSL302SNH6327XTSA1 | BSL302SNH6327 |
| Description | MOSFET SMALL SIGNAL+N-CH | 30V,25m��,7.1A,N-Ch Small-Signal MOSFET |
| Manufacturer | Infineon | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PG-TSOP-6 | - |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 7.1 A | - |
| Rds On Drain Source Resistance | 25 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 4.4 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1.1 mm | - |
| Length | 3 mm | - |
| Transistor Type | 1 N-Channel | 1 P-Channel |
| Width | 1.5 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 16 S | - |
| Fall Time | 1.9 ns | 1.9 ns |
| Product Type | MOSFET | - |
| Rise Time | 2.8 ns | 2.8 ns |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 13.7 ns | 13.7 ns |
| Typical Turn On Delay Time | 6.4 ns | 6.4 ns |
| Part # Aliases | BSL302SN H6327 SP001100662 | - |
| Unit Weight | 0.000529 oz | - |
| Part Aliases | - | BSL302SN H6327 SP001100662 |
| Package Case | - | TSOP-6 |
| Pd Power Dissipation | - | 2 W |
| Vgs Gate Source Voltage | - | 20 V |
| Id Continuous Drain Current | - | 7.1 A |
| Vds Drain Source Breakdown Voltage | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V |
| Rds On Drain Source Resistance | - | 25 mOhms |
| Qg Gate Charge | - | 4.4 nC |