 | | | |
| PartNumber | BSL806N | BSL806N H6327 | BSL806N L6327 |
| Description | IGBT Transistors MOSFET N-Ch 20V 2.3A TSOP-6 | ||
| Manufacturer | INFINEON | - | Infineon Technologies |
| Product Category | FETs - Arrays | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | BSL806 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | BSL806NL6327HTSA1 SP000464844 |
| Unit Weight | - | - | 0.000705 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TSOP-6 |
| Technology | - | - | Si |
| Number of Channels | - | - | 2 Channel |
| Configuration | - | - | Dual |
| Transistor Type | - | - | 2 N-Channel |
| Pd Power Dissipation | - | - | 500 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 3.7 ns |
| Rise Time | - | - | 9.9 ns |
| Vgs Gate Source Voltage | - | - | 8 V |
| Id Continuous Drain Current | - | - | 2.3 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 57 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 12 nS |
| Qg Gate Charge | - | - | 1.7 nC |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSL806NH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSL806NL6327HTSA1 | MOSFET 2N-CH 20V 2.3A 6TSOP | ||
| BSL806NH6327XTSA1 | MOSFET 2 N-CH 20V 2.3A TSOP6-6 | ||
| BSL806N | 全新原装 | ||
| BSL806N H6327 | 全新原装 | ||
| BSL806N6327 | 全新原装 | ||
| BSL806NH6327 | 全新原装 | ||
| BSL806NL6327 | Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSL806N L6327 | IGBT Transistors MOSFET N-Ch 20V 2.3A TSOP-6 |