BSM30G

BSM30GD60DLC vs BSM30GD60DLCBOSA1 vs BSM30GD60DLCE3224

 
PartNumberBSM30GD60DLCBSM30GD60DLCBOSA1BSM30GD60DLCE3224
DescriptionIGBT Modules 600V 30A 3-PHASEIGBT 2 LOW POWER ECONO2-1IGBT Modules N-CH 600V 40A
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Modules-IGBTs - Modules
RoHSN--
ProductIGBT Silicon Modules-IGBT Silicon Modules
ConfigurationHex-Hex
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.95 V-1.95 V
Continuous Collector Current at 25 C40 A-40 A
Gate Emitter Leakage Current400 nA-400 nA
Pd Power Dissipation135 W--
Package / CaseEconoPACK 2A--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 125 C-+ 125 C
PackagingTray-Reel
Height17 mm--
Length107.5 mm--
Width45 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount-Screw
Maximum Gate Emitter Voltage20 V-+/- 20 V
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM30GD60DLCBOSA1 SP000100389--
Package Case--EconoPACK 2A
Pd Power Dissipation--135 W
Collector Emitter Voltage VCEO Max--600 V
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
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