 |  | | |
| PartNumber | BSM35GD120DN2E3224 | BSM35GD120DN2E3224(6) | BSM35GD120DN2E3224BOSA1 |
| Description | IGBT Modules N-CH 1.2KV 50A | IGBT 2 LOW POWER ECONO2-2 | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | N | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Hex | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.7 V | - | - |
| Continuous Collector Current at 25 C | 50 A | - | - |
| Gate Emitter Leakage Current | 150 nA | - | - |
| Pd Power Dissipation | 280 W | - | - |
| Package / Case | EconoPACK 2 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Height | 17 mm | - | - |
| Length | 107.5 mm | - | - |
| Width | 45 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | BSM35GD120DN2E3224BOSA1 SP000091898 | - | - |
| Unit Weight | 6.490409 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM35GD120DN2E3224 | IGBT Modules N-CH 1.2KV 50A | |
| BSM35GD120DN2E3224BOSA1 | IGBT 2 LOW POWER ECONO2-2 | ||
| BSM35GD120DN2E3224(6) | 全新原装 | ||
| BSM35GD120DN2E3224 | IGBT Modules N-CH 1.2KV 50A |