 |  | | |
| PartNumber | BSM75GAL120DN2 | BSM75GAL100D | BSM75GAL120D |
| Description | IGBT Modules 1200V 75A CHOPPER | ||
| Manufacturer | Infineon | - | SIEMENS |
| Product Category | IGBT Modules | - | Module |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Half Bridge | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.5 V | - | - |
| Continuous Collector Current at 25 C | 105 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 625 W | - | - |
| Package / Case | Half Bridge GAL 1 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Height | 30.5 mm | - | - |
| Length | 94 mm | - | - |
| Width | 34 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | BSM75GAL120DN2HOSA1 SP000106455 | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM75GAL120DN2 | IGBT Modules 1200V 75A CHOPPER | |
| BSM75GAL120DN2HOSA1 | MEDIUM POWER 34MM | ||
| BSM75GAL100D | 全新原装 | ||
| BSM75GAL120D | 全新原装 | ||
| BSM75GAL120DN2 | IGBT Modules 1200V 75A CHOPPER |