BSP

BSP16T1G vs BSP19,115 vs BSP19AT1

 
PartNumberBSP16T1GBSP19,115BSP19AT1
DescriptionBipolar Transistors - BJT 100mA 300V PNPBipolar Transistors - BJT TRANS HV TAPE-7TRANS NPN 350V 0.1A SOT223
ManufacturerON SemiconductorNexperia-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-3-
Transistor PolarityPNPNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 300 V350 V-
Collector Base Voltage VCBO- 350 V400 V-
Emitter Base Voltage VEBO6 V5 V-
Collector Emitter Saturation Voltage- 2 V--
Maximum DC Collector Current- 100 mA0.1 A-
Gain Bandwidth Product fT15 MHz70 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBSP16--
Height1.57 mm1.7 mm-
Length6.5 mm6.7 mm-
PackagingReelReel-
Width3.5 mm3.7 mm-
BrandON SemiconductorNexperia-
Continuous Collector Current- 1 A--
DC Collector/Base Gain hfe Min3040 at 20 mA, 10 V-
Pd Power Dissipation1.5 mW1200 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz-
DC Current Gain hFE Max-40 at 20 mA, 10 V-
Qualification-AEC-Q101-
Part # Aliases-BSP19 T/R-
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  • BSP 1035
制造商 型号 描述 RFQ
ON Semiconductor
ON Semiconductor
BSP16T1G Bipolar Transistors - BJT 100mA 300V PNP
BSP19AT1 TRANS NPN 350V 0.1A SOT223
BSP16T1G Bipolar Transistors - BJT 1A 300V PNP
Nexperia
Nexperia
BSP19,115 Bipolar Transistors - BJT TRANS HV TAPE-7
BSP19,115 TRANS NPN 350V 0.1A SOT223
Infineon Technologies
Infineon Technologies
BSP171P H6327 MOSFET P-Ch -60V 1.9A SOT-223-3
BSP171PH6327XTSA1 MOSFET P-Ch -60V 1.9A SOT-223-3
BSP170P H6327 MOSFET P-Ch -60V -1.9A SOT-223-3
BSP170PH6327XTSA1 MOSFET P-Ch -60V -1.9A SOT-223-3
BSP179H6327XTSA1 MOSFET SMALL SIGNAL+P-CH
BSP170P H6327 Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
BSP170PE6327T MOSFET P-CH 60V 1.9A SOT223
BSP170PH6327XTSA1 MOSFET P-CH 60V 1.9A SOT223
BSP170PL6327HTSA1 MOSFET P-CH 60V 1.9A SOT-223
BSP171P H6327 Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
BSP171PE6327 MOSFET P-CH 60V 1.9A SOT223
BSP171PH6327XTSA1 MOSFET P-CH 60V 1.9A SOT223
BSP171PL6327HTSA1 MOSFET P-CH 60V 1.9A SOT-223
BSP179H6327XTSA1 MOSFET N-CH 400V 0.21A SOT-223
BSP170PE6327 MOSFET P-CH 60V 1.9A SOT223
BSP171PE6327T MOSFET P-CH 60V 1.9A SOT223
Panduit
Panduit
BSP18-3K Terminals Butt Splice premium nylon insulated 22
BSP18-3K Terminals Butt Splice premium nylon insulated 22
BSP16T1G/BT2 全新原装
BSP16TA Bipolar Transistors - BJT
BSP170 全新原装
BSP170P 全新原装
BSP170PH6327 -60V,-1.9A,P-Ch Small-Signal MOSFET
BSP170PL6327 全新原装
BSP170PL6327INCT 全新原装
BSP171 全新原装
BSP171 E6327 全新原装
BSP171E 全新原装
BSP171P P CH MOSFET, -60V, 1.45A, SOT-223, Transistor Polarity:P Channel, Continuous Drain Current Id:1.45A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):0.4ohm, Rds(on) Test Voltage Vgs:-10V, T
BSP171P E6327 全新原装
BSP171P E6327 , TEA1751T 全新原装
BSP171P E6919 全新原装
BSP171P L6327 MOSFET P-Ch -60V 1.9A SOT-223-3
BSP171PH6327 -60V,-1.9A P-Channel Power MOSFET
BSP171PL 全新原装
BSP171PL6327 Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BSP171PL6327XT 全新原装
BSP19115 全新原装
BSP19A 全新原装
BSP171 E6919 全新原装
BSP171E6919 全新原装
BSP170PH6327XTSA1-CUT TAPE 全新原装
BSP171PH6327XTSA1-CUT TAPE 全新原装
BSP17 INSTOCK
BSP19 NPN HIGH-VOLTAGE TRANSISTOR BSP19 SST3, RL
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