 | | |
| PartNumber | BSP320SH6433XTMA1 | BSP320SH6327XTSA1 |
| Description | MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A | MOSFET N-Ch 60V 2.9A SOT-223-3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | SOT-223-4 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 2.9 A | 2.9 A |
| Rds On Drain Source Resistance | 120 mOhms | 120 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 9.7 nC | 12 nC |
| Minimum Operating Temperature | - 50 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1.8 W | 1.8 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1.6 mm | 1.6 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | BSP320 | BSP320 |
| Transistor Type | 1 P-Channel | 1 N-Channel |
| Width | 3.5 mm | 3.5 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 2.5 S | 2.5 S |
| Fall Time | 35 ns | 35 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 25 ns | 25 ns |
| Factory Pack Quantity | 4000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 25 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns |
| Part # Aliases | BSP320S H6433 SP001058772 | BSP320S H6327 SP001058768 |
| Unit Weight | 0.003951 oz | 0.003951 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP320SH6433XTMA1 | MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A | |
| BSP320SH6327XTSA1 | MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
| BSP320SH6433XTMA1 | MOSFET N-CH 60V 2.9A SOT223 | ||
| BSP320SH6327XTSA1 | IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
| BSP320SH6327 | 60V,120m,2.9A,N-Ch Small-Signal MOSFET |