 |  | | |
| PartNumber | BSP322PH6327XTSA1 | BSP322P | BSP322PH6327 |
| Description | MOSFET P-Ch -100V 1A SOT-223-3 | ||
| Manufacturer | Infineon | INF | Infineon Technologies |
| Product Category | MOSFET | FETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PG-SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1 A | - | - |
| Rds On Drain Source Resistance | 800 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 12.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Reel |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP322 | - | BSP322 |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 0.7 S | - | - |
| Fall Time | 8.3 ns | - | 8.3 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 4.3 ns | - | 4.3 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21.2 ns | - | 21.2 ns |
| Typical Turn On Delay Time | 4.6 ns | - | 4.6 ns |
| Part # Aliases | BSP322P H6327 SP001058784 | - | - |
| Unit Weight | 0.003951 oz | - | 0.008826 oz |
| Part Aliases | - | - | BSP322P H6327 SP001058784 |
| Package Case | - | - | SOT-223-4 |
| Pd Power Dissipation | - | - | 1.8 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | - 1 A |
| Vds Drain Source Breakdown Voltage | - | - | - 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 2 V |
| Rds On Drain Source Resistance | - | - | 1 Ohms |
| Qg Gate Charge | - | - | 12.4 nC |
| Forward Transconductance Min | - | - | 0.7 S |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP322PH6327XTSA1 | MOSFET P-Ch -100V 1A SOT-223-3 | |
| BSP322PH6327XTSA1 | MOSFET P-CH 100V 1A SOT-223 | ||
| BSP322PL6327HTSA1 | MOSFET P-CH 100V 1A SOT-223 | ||
| BSP322P | 全新原装 | ||
| BSP322PH6327 | 全新原装 | ||
| BSP322P H6327 | MOSFETs | ||
| BSP322P L6327 | MOSFET P-Ch -100V 1A SOT-223-3 | ||
| BSP322PL6327 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |